Advanced node transition raising material intensity per wafer sharply
An advanced node consumes around 2.7 times the material steps of a mature node, through additional patterning passes, more deposition and etch cycles, and repeated planarisation between layers. Extreme ultraviolet lithography adds its own resist and ancillary requirements on top. That intensity means materials value grows through technology transition even when total wafer starts are flat, which decouples this market from the semiconductor cycle more than most suppliers into the industry manage to achieve. Extreme ultraviolet lithography adds its own resist and ancillary requirements on top of that, which compounds the effect at the leading edge considerably.
Market Impact: Japanese demand growing at 11.4%

