Gate-All-Around Architectures Multiply Deposition Step Counts
Moving from finFET to gate-all-around nanosheet transistors requires depositing and then selectively removing sacrificial layers, wrapping gate dielectric and metal around every channel, and doing all of it with atomic precision. TSMC, Samsung, and Intel have all committed to the architecture at their leading nodes, and the deposition step count rises materially against the generation it replaces. Atomic layer deposition carries most of that increase because nothing else deposits conformally into the released channel geometry. The transition is committed rather than speculative, which makes it the most reliable demand mechanism in the market.
Market Impact: CHIPS Act commits 52 billion dollar








