Gate-All-Around Transistors Require New Slurry Chemistries
The industry's transition to gate-all-around transistor architectures at leading logic nodes requires entirely new slurry chemistries capable of selectively removing nanosheet channel materials without damaging adjacent structures, a challenge conventional planar-node formulations cannot address. Advanced logic fabs now require roughly 25 distinct CMP steps per wafer at leading nodes, up from around 15 steps just two process generations earlier. This transition is consolidating supplier share around companies that invested early in gate-all-around compatible chemistries, while suppliers still optimized for planar transistor generations face mounting pressure to develop new formulations or lose qualification business entirely.
Market Impact: 50% advanced node capacity growth planned








